AOC2413 8v p-channel mosfet general description product summary v ds i d (at v gs =-2.5v) -3.5a r ds(on) (at v gs =-2.5v) < 28m w r ds(on) (at v gs =-1.8v) < 32m w r ds(on) (at v gs =-1.5v) < 37m w r ds(on) (at v gs =-1.2v) < 47m w typical esd protection hbm class 3a the AOC2413 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.2v while retaining a 5v v gs(max) rating. absolute maximum ratings t a =25c unless otherwise noted -8v top view bottom view pin1(g) g s 2 3 1 4 d d mcsp 1.57x1.57_4 top view bottom view s g d symbol v ds v gs t a =25c i d i dm t a =25c p d t j , t stg symbol t 10s steady-state note 1. mounted on minimum pad pcb note 2. pw <300 s pulses, duty cycle 0.5% max 0.55 c/w maximum junction-to-ambient a d 230 maximum junction-to-ambient a c thermal characteristics typ drain-source voltage -8 a -3.5 -50 v 5 gate-source voltage source current (pulse) note2 v maximum units parameter max junction and storage temperature range absolute maximum ratings t a =25c unless otherwise noted -55 to 150 source current (dc) note1 power dissipation note1 c/w r q ja 140 190 170 units parameter w rev 0 : dec. 2012 www.aosmd.com page 1 of 5
AOC2413 symbol min typ max units bv dss -8 v v ds =-8v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.15 -0.42 -0.65 v 22.5 28 t j =125c 29.5 37 25 32 m w 28 37 m w 34 47 m w g fs 14 s v sd -0.52 -1 v c iss 1935 pf c oss 475 pf c rss 240 pf r g 1.7 k w q g 19 27 nc q gs 7.5 nc q gd 3.5 nc t d(on) 1.6 m s t r 2.8 m s t d(off) 2.7 m s t f 6.2 m s t rr 17 ns q rr 9 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =-1.5v, i d =-1a body diode reverse recovery time drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-2.5v, i d =-1.5a reverse transfer capacitance i f =-1.5a, di/dt=100a/ m s v gs =0v, v ds =-4v, f=1mhz switching parameters v ds =v gs i d =-250 m a v ds =0v, v gs =5v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =-1a,v gs =0v v ds =-5v, i d =-1.5a v gs =-1.8v, i d =-1a v gs =-1.2v, i d =-1a total gate charge v gs =-4.5v, v ds =-4v, i d =-1.5a gate source charge gate drain charge v gs =-2.5v, v ds =-4v, r l =2.67 w , r gen =3 w gate resistance body diode reverse recovery charge i f =-1.5a, di/dt=100a/ m s input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =0v, v ds =0v, f=1mhz turn-off fall time rev 0: dec. 2012 www.aosmd.com page 2 of 5
AOC2413 typical electrical and thermal characteristics 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics 10 20 30 40 50 0 1 2 3 4 5 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-1.5v i d =-1a v gs =-2.5v i d =-1.5a v gs =-1.8v i d =-1a v gs =-1.2v i d =-1a 25 c 125 c v ds =-5v v gs =-2.5v v gs =-1.5v 0 10 20 30 40 50 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics v gs =-1.0v -1.5v -4.5v -2.5v -2.0v v gs =-1.2v v gs =-1.8v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 10 20 30 40 50 60 0 1 2 3 4 5 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-1.5a 25 c 125 c rev 0: dec. 2012 www.aosmd.com page 3 of 5
AOC2413 typical electrical and thermal characteristics 0 1 2 3 4 5 0 5 10 15 20 25 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 0 2 4 6 8 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-4v i d =-1.5a 0 10 20 30 40 50 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient operating area 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =230 c/w rev 0: dec. 2012 www.aosmd.com page 4 of 5
AOC2413 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c d u t l v gs v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 0: dec. 2012 www.aosmd.com page 5 of 5
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